JPH0457110B2 - - Google Patents

Info

Publication number
JPH0457110B2
JPH0457110B2 JP58233778A JP23377883A JPH0457110B2 JP H0457110 B2 JPH0457110 B2 JP H0457110B2 JP 58233778 A JP58233778 A JP 58233778A JP 23377883 A JP23377883 A JP 23377883A JP H0457110 B2 JPH0457110 B2 JP H0457110B2
Authority
JP
Japan
Prior art keywords
base region
region
main terminal
channel
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58233778A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59132666A (ja
Inventor
Jaianto Bariga Bantobaru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of JPS59132666A publication Critical patent/JPS59132666A/ja
Publication of JPH0457110B2 publication Critical patent/JPH0457110B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs

Landscapes

  • Thyristors (AREA)
JP58233778A 1982-12-13 1983-12-13 二方向性絶縁ゲ−ト整流器の構造と作動方法 Granted JPS59132666A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US44932282A 1982-12-13 1982-12-13
US449322 1982-12-13

Publications (2)

Publication Number Publication Date
JPS59132666A JPS59132666A (ja) 1984-07-30
JPH0457110B2 true JPH0457110B2 (en]) 1992-09-10

Family

ID=23783729

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58233778A Granted JPS59132666A (ja) 1982-12-13 1983-12-13 二方向性絶縁ゲ−ト整流器の構造と作動方法

Country Status (4)

Country Link
EP (1) EP0111804B1 (en])
JP (1) JPS59132666A (en])
CA (1) CA1200322A (en])
DE (1) DE3373747D1 (en])

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IE55992B1 (en) * 1982-04-05 1991-03-13 Gen Electric Insulated gate rectifier with improved current-carrying capability
GB2190539A (en) * 1986-05-16 1987-11-18 Philips Electronic Associated Semiconductor devices
JPS6373563A (ja) * 1986-08-01 1988-04-04 シリコニックス・インコ−ポレイテッド 絶縁ゲ−トバイポ−ラトランジスタ装置、その使用方法及び製造方法
JPH0821713B2 (ja) * 1987-02-26 1996-03-04 株式会社東芝 導電変調型ｍｏｓｆｅｔ
JP2703240B2 (ja) * 1987-12-03 1998-01-26 株式会社東芝 導電変調型ｍｏｓｆｅｔ
US4998156A (en) * 1988-03-25 1991-03-05 General Electric Company Structure for a complementary-symmetry COMFET pair
JPH07120799B2 (ja) * 1988-04-01 1995-12-20 株式会社日立製作所 半導体装置
EP0394859A1 (de) * 1989-04-28 1990-10-31 Asea Brown Boveri Ag Bidirektionals, abschaltbares Halbeiterbauelement
US5977569A (en) * 1996-09-24 1999-11-02 Allen-Bradley Company, Llc Bidirectional lateral insulated gate bipolar transistor having increased voltage blocking capability
CN1187839C (zh) 2001-01-19 2005-02-02 三菱电机株式会社 半导体装置
FR2830127B1 (fr) * 2001-09-21 2004-12-24 St Microelectronics Sa Commutateur monolithique bidirectionnel vertical a commande en tension
JP6491201B2 (ja) 2013-06-24 2019-03-27 アイディール パワー インコーポレイテッド 双方向バイポーラトランジスタを有するシステム、回路、素子、及び方法
US9742385B2 (en) 2013-06-24 2017-08-22 Ideal Power, Inc. Bidirectional semiconductor switch with passive turnoff
US9799731B2 (en) 2013-06-24 2017-10-24 Ideal Power, Inc. Multi-level inverters using sequenced drive of double-base bidirectional bipolar transistors
CN103545312B (zh) * 2013-10-29 2016-08-24 无锡中感微电子股份有限公司 具有串联的双nmos的集成电路及制备方法
US9355853B2 (en) 2013-12-11 2016-05-31 Ideal Power Inc. Systems and methods for bidirectional device fabrication
US11637016B2 (en) 2013-12-11 2023-04-25 Ideal Power Inc. Systems and methods for bidirectional device fabrication
US9444449B2 (en) 2014-11-06 2016-09-13 Ideal Power Inc. Circuits, methods, and systems with optimized operation of double-base bipolar junction transistors
CN105932043A (zh) * 2016-05-11 2016-09-07 电子科技大学 具有超势垒集电极结构的igbt器件及其制造方法
CN106816463B (zh) * 2017-01-16 2023-02-03 全球能源互联网研究院有限公司 一种终端结构、半导体器件及其制备方法
JP7027287B2 (ja) * 2018-09-19 2022-03-01 株式会社東芝 半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3019883A1 (de) * 1980-05-23 1981-12-03 Siemens AG, 1000 Berlin und 8000 München Zweirichtungsthyristor
SE8107136L (sv) * 1980-12-02 1982-06-03 Gen Electric Styrelektrodforsedd likriktaranordning
DE3118365A1 (de) * 1981-05-08 1982-11-25 Siemens AG, 1000 Berlin und 8000 München Thyristor mit in den emitter eingefuegten steuerbaren emitter-kurzschlusspfaden

Also Published As

Publication number Publication date
DE3373747D1 (en) 1987-10-22
CA1200322A (en) 1986-02-04
JPS59132666A (ja) 1984-07-30
EP0111804B1 (en) 1987-09-16
EP0111804A1 (en) 1984-06-27

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